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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Type | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Operating Supply Voltage | Operating Frequency | Operating Supply Current | NF - Noise Figure | Gain | P1dB - Compression Point | OIP3 - Third Order Intercept | Test Frequency | |
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20
In-stock
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Qorvo | RF Amplifier 13.4-16.5GHz 12W GaN Gain >26dB PAE >25% | Power Amplifier | SMD/SMT | Die | Waffle | 28 V | 13.4 GHz to 16.5 GHz | 225 mA | - | 23 dB | ||||||||
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25
In-stock
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Hittite / Analog Devices | RF Amplifier 2 Watt pow amp Chip, 6 - 10 GHz | Power Amplifier | SMD/SMT | Die | - 55 C | + 85 C | Gel Pack | 7 V | 6 GHz to 10 GHz | 1.34 A | - | 23 dB | 33 dBm | 43 dBm | ||||
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4
In-stock
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Qorvo | RF Amplifier 3.1-3.6GHz 80W GaN Pout 49dBm PAE 50% | Power Amplifier | Screw | - 40 C | + 85 C | Waffle | 30 V | 3.6 GHz | 200 mA | 23 dB | 3.3 GHz | |||||||
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100
In-stock
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Qorvo | RF Amplifier 26-31GHz 1Watt Psat 32dBm Gain 23dB | Power Amplifier | SMD/SMT | ACQFN-26 | - 40 C | + 85 C | Waffle | 6 V | 26 GHz to 31 GHz | 1.1 A | - | 23 dB | 31 dBm | |||||
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46
In-stock
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Hittite / Analog Devices | RF Amplifier pow amp SMT, 1.6 - 2.2 GHz | Power Amplifier | SMD/SMT | QS16G | - 40 C | + 85 C | Cut Tape | 3.6 V, 5 V | 1.6 GHz to 2.2 GHz | 0.002 mA, 270 mA | 5.5 dB | 23 dB | 27 dBm | 40 dBm | ||||
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30
In-stock
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Qorvo | RF Amplifier 27-5-31GHz GaN 9W Gain 23dB PAE 24% | Power Amplifier | Waffle | 20 V | 27.5 GHz to 31 GHz | 280 mA | - | 23 dB | 39.5 dBm | |||||||||
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4
In-stock
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Hittite / Analog Devices | RF Amplifier 2W Ka Band VSAT PA | Power Amplifier | SMD/SMT | Die | - 55 C | + 85 C | Gel Pack | 6 V | 27.5 GHz to 31 GHz | 1 A | 23 dB | 34 dBm | 38 dBm | |||||
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VIEW | Qorvo | RF Amplifier 27-31GHz PAE 28% GaN Gain 23dB GaN | Power Amplifier | SMD/SMT | + 275 C | Waffle | 20 V | 27 GHz to 31 GHz | 140 mA | - | 23 dB | 37 dBm | |||||||
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VIEW | Qorvo | RF Amplifier 19-27GHz K Band MPA Gain 22dB Pout 25dBm | Power Amplifier | DIE (2.55 mm x 1.15 mm) / Wafer | + 150 C | 6 V | 19 GHz to 27 GHz | 220 mA | 23 dB | 25 dBm | 32 dBm | 22 GHz | |||||||
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VIEW | MACOM | RF Amplifier .1-3GHz Gain 23dB PAE 40% Psat 30dBm | Power Amplifier | SMD/SMT | PQFN-16 | - 40 C | + 85 C | Reel | 9 V | 100 MHz to 3 GHz | 265 mA | 23 dB | 29 dBm | 40 dBm | 1 GHz |
