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Package / Case :
Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Collector-Emitter Saturation Voltage :
Maximum DC Collector Current :
Gain Bandwidth Product fT :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Series Configuration Transistor Polarity Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Maximum DC Collector Current Gain Bandwidth Product fT
HN1B01F-GR(TE85L,F
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RFQ
5,800
In-stock
Toshiba Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A SMD/SMT SM-6 + 125 C HN1B01 Dual PNP 50 V 50 V 5 V 0.1 V 150 mA 80 MHz
HN1B01F-Y(TE85L,F)
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RFQ
1,910
In-stock
Toshiba Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A SMD/SMT SM-6 + 125 C HN1B01 Dual PNP 50 V 50 V 5 V 0.1 V 150 mA 80 MHz
HN1B01FU-GR,LF
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RFQ
Toshiba Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp SMD/SMT SOT-363-6 + 125 C HN1B01 Dual NPN, PNP 50 V, - 50 V 60 V, - 50 V 5 V, - 5 V 100 mV, - 100 mV 150 mA, - 150 mA 150 MHz, 120 MHz
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