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- Series :
- Configuration :
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- Gain Bandwidth Product fT :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Configuration | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Maximum DC Collector Current | Gain Bandwidth Product fT | |
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5,359
In-stock
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Nexperia | Bipolar Transistors - BJT TRANS DOUBLE TAPE-7 | SMD/SMT | SOT-363-6 | + 150 C | Dual | NPN, PNP | 50 V | 60 V | 7 V | 0.15 A | 100 MHz, 190 MHz | |||||
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4,565
In-stock
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onsemi | Bipolar Transistors - BJT 2.5/3.3V 4:1 DIFF MUX | SMD/SMT | SOT-363-6 | + 150 C | MCH6544 | Dual | NPN | 50 V | 6 V | 5 V | 50 mV | 500 mA | 500 MHz | |||
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5,855
In-stock
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ROHM Semiconductor | Bipolar Transistors - BJT DUAL NPN 50V 150MA SOT-363 | SMD/SMT | SOT-363-6 | + 150 C | UMX1N | Dual | NPN | 50 V | 60 V | 7 V | 0.15 A | 180 MHz | ||||
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VIEW | Nexperia | Bipolar Transistors - BJT DOUBLE NPN TRANSISTR | SMD/SMT | SOT-363-6 | + 150 C | Dual | NPN | 50 V | 60 V | 7 V | 0.15 A | 100 MHz | |||||
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VIEW | Toshiba | Bipolar Transistors - BJT Bias Resistor Built- in Transistor, 2in1 | SMD/SMT | SOT-363-6 | + 150 C | RN1901 | Single | NPN | 50 V | 50 V | 10 V | 100 mV | 100 mA | 250 MHz |