- Manufacture :
- Package / Case :
- Collector-Emitter Saturation Voltage :
- Maximum DC Collector Current :
- Gain Bandwidth Product fT :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Configuration | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Maximum DC Collector Current | Gain Bandwidth Product fT | |
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1,617
In-stock
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Diodes Incorporated | Bipolar Transistors - BJT 1000W -32Vceo | SMD/SMT | SOT-89-3 | + 150 C | 2DB11 | Single | PNP | 32 V | 40 V | 6 V | 800 mV | 2 A | 120 MHz | |||
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4,560
In-stock
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Diodes Incorporated | Bipolar Transistors - BJT 1000W 32Vceo | SMD/SMT | SOT-89-3 | + 150 C | 2DD16 | Single | NPN | 32 V | 40 V | 6 V | 400 mV | 1 A | 280 MHz | |||
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5,269
In-stock
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Infineon Technologies | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | SMD/SMT | SOT-23-3 | + 150 C | BCW60 | Single | NPN | 32 V | 32 V | 6 V | 0.2 V | 200 mA | 250 MHz | |||
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173
In-stock
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Infineon Technologies | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | SMD/SMT | SOT-23-3 | + 150 C | BCW60 | Single | NPN | 32 V | 32 V | 6 V | 0.2 V | 200 mA | 250 MHz | |||
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47,150
In-stock
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Infineon Technologies | Bipolar Transistors - BJT NPN Silicon AF Transistors | SMD/SMT | SOT-23-3 | + 150 C | BCW60 | Single | NPN | 32 V | 32 V | 6 V | 0.1 A | 250 MHz | ||||
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44,850
In-stock
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Infineon Technologies | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | SMD/SMT | SOT-23-3 | + 150 C | BCW60 | Single | NPN | 32 V | 32 V | 6 V | 0.2 V | 200 mA | 250 MHz |