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Maximum Operating Temperature :
Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Collector- Base Voltage VCBO :
Emitter- Base Voltage VEBO :
Collector-Emitter Saturation Voltage :
Maximum DC Collector Current :
Gain Bandwidth Product fT :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Series Configuration Transistor Polarity Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Maximum DC Collector Current Gain Bandwidth Product fT
HN1A01FU-Y
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RFQ
58,900
In-stock
Toshiba Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1... SMD/SMT US-6   HN1A01   PNP - 50 V - 50 V - 5 V - 0.1 V - 150 mA 80 MHz
HN2C01FU-GR(T5L,F)
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RFQ
5,570
In-stock
Toshiba Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6 SMD/SMT US-6 + 125 C HN2C01 Dual NPN 50 V 60 V 5 V 0.1 V 150 mA 80 MHz
HN2A01FU-Y(TE85L,F
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RFQ
2,984
In-stock
Toshiba Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A SMD/SMT US-6 + 125 C HN2A01 Dual PNP 50 V 50 V 5 V 0.1 V 150 mA 80 MHz
HN1C03FU-B(TE85L,F
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RFQ
Toshiba Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6 SMD/SMT US-6 + 150 C HN1C03 Dual NPN 20 V 50 V 25 V 42 mV 300 mA 30 MHz
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