- Package / Case :
- Configuration :
- Gate-Emitter Leakage Current :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
26
In-stock
|
Infineon Technologies | IGBT Modules IGBT Module 25A 1200V | IGBT Silicon Modules | SmartPIM1 | + 150 C | Bulk | 190 W | PIM 3-Phase Input Rectifier | 1200 V | 1.85 V | 39 A | 400 nA | |||
|
GET PRICE |
12
In-stock
|
Infineon Technologies | IGBT Modules IGBT Module 35A 1200V | IGBT Silicon Modules | SmartPIM1 | + 150 C | Bulk | 250 W | PIM 3-Phase Input Rectifier | 1200 V | 1.85 V | 54 A | 400 nA | |||
|
GET PRICE |
15,000
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 50A | IGBT Silicon Modules | Module | + 150 C | 335 W | IGBT-Inverter | 1200 V | 1.85 V | 83 A | 100 nA | ||||
|
GET PRICE |
19,000
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 25A | IGBT Silicon Modules | Module | + 150 C | 160 W | 3-Phase | 1200 V | 1.85 V | 25 A | 100 nA | ||||
|
GET PRICE |
11
In-stock
|
Infineon Technologies | IGBT Modules IGBT Module 25A 1200V | IGBT Silicon Modules | Module | + 150 C | 160 W | Dual Modules | 1200 V | 1.85 V | 100 nA |