- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Applied Filters :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
278
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 300A | IGBT Silicon Modules | 62 mm | + 150 C | Tray | 1600 W | Dual | 1200 V | 2.1 V | 450 A | 400 nA | |||
|
109
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 580A | IGBT Silicon Modules | 62 mm | + 150 C | Bulk | 2400 W | Dual | 1200 V | 2.1 V | 580 A | 400 nA | ||||
|
160
In-stock
|
Infineon Technologies | IGBT Modules 1200V 300A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 2500 W | Dual | 1200 V | 2.1 V | 625 A | 400 nA | |||||
|
100
In-stock
|
Infineon Technologies | IGBT Modules 1200V 400A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 2500 W | Single Dual Emitter | 1200 V | 2.1 V | 625 A | 400 nA | |||||
|
17,100
In-stock
|
Infineon Technologies | IGBT Modules 1200V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 1200 V | 2.1 V | 300 A | 400 nA | |||||
|
52
In-stock
|
Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 780 W | Dual | 1200 V | 2.1 V | 200 A | 400 nA | |||||
|
VIEW | Infineon Technologies | IGBT Modules 1200V 200A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Single Dual Emitter | 1200 V | 2.1 V | 370 A | 400 nA | |||||
|
GET PRICE |
16,200
In-stock
|
Infineon Technologies | IGBT Modules 1200V 200A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1550 W | Dual | 1200 V | 2.1 V | 420 A | 400 nA | ||||
|
VIEW | Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | Bulk | 2250 W | Single Dual Emitter | 1200 V | 2.1 V | 570 A | 400 nA | ||||
|
36
In-stock
|
Infineon Technologies | IGBT Modules 1200V 200A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Single Dual Emitter | 1200 V | 2.1 V | 370 A | 400 nA |