- Collector- Emitter Voltage VCEO Max :
- Continuous Collector Current at 25 C :
- Gate-Emitter Leakage Current :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3
In-stock
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Infineon Technologies | IGBT Modules IGBT 1700V 3600A | IGBT Silicon Modules | + 150 C | 21 kW | 1700 V | 2.25 V | 3600 A | 400 nA | |||||
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80
In-stock
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Infineon Technologies | IGBT Modules 1.85V IGBT 4 PIM | IGBT Silicon Modules | Econo 3 | + 150 C | 385 W | 3-Phase | 1200 V | 2.25 V | 150 A | 100 nA | |||
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15,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 50A | IGBT Silicon Modules | Econo 3 | + 150 C | Tray | 280 W | 3-Phase | 1200 V | 2.25 V | 50 A | 100 nA | ||
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14
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 25A | IGBT Silicon Modules | + 150 C | Tray | 175 W | 1200 V | 2.25 V | 39 A | 400 nA | ||||
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10,000
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 50A 1200V | IGBT Silicon Modules | Econo 3 | + 150 C | 280 W | 3-Phase | 1200 V | 2.25 V | 50 A | 100 nA |
