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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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GET PRICE |
17,000
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 900A | IGBT Silicon Modules | + 150 C | 5.1 kW | 1200 V | 2.05 V | 900 A | 400 nA | |||||
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GET PRICE |
20,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 1.4KA | IGBT Silicon Modules | PRIME3 | + 150 C | 7.65 kW | Dual | 1200 V | 2.05 V | 1400 A | 400 nA | |||
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GET PRICE |
200
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 400A | IGBT Silicon Modules | + 150 C | Tray | 2400 W | 1200 V | 2.05 V | 400 A | 400 nA | ||||
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GET PRICE |
150
In-stock
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Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | 62 mm | + 150 C | 1100 W | Dual | 1200 V | 2.05 V | 240 A | 400 nA | |||
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GET PRICE |
3
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 600A | IGBT Silicon Modules | + 150 C | 3.35 kW | 1200 V | 2.05 V | 600 A | 400 nA |
