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Maximum Operating Temperature :
Packaging :
Configuration :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
FF150R12RT4
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RFQ
370
In-stock
Infineon Technologies IGBT Modules IGBT 1200V 150A IGBT Silicon Modules Module + 150 C Bulk 790 W Dual 1200 V 1.75 V 150 A 100 nA
FZ400R12KE4
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RFQ
12,600
In-stock
Infineon Technologies IGBT Modules IGBT 1200V 400A IGBT Silicon Modules Module + 150 C   2400 W Single 1.2 kV 1.75 V 400 A 400 nA
FF300R07KE4
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RFQ
18,100
In-stock
Infineon Technologies IGBT Modules IGBT Module 300A 650V IGBT Silicon Modules 62 mm + 150 C Tray 940 W Dual 650 V 1.75 V 365 A 400 nA
FF1800R17IP5
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RFQ
140
In-stock
Infineon Technologies IGBT Modules PP IHM I XHP 1 7KV IGBT Silicon Modules PRIME3 + 175 C   8.95 kW Dual 1700 V 1.75 V 1800 A 400 nA
FF300R12ME4
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RFQ
380
In-stock
Infineon Technologies IGBT Modules IGBT 1200V 300A IGBT Silicon Modules   + 125 C   1.6 kW Dual 1200 V 1.75 V 450 A 0.4 uA
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