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- Pd - Power Dissipation :
- Gate-Emitter Leakage Current :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Factory Pack Quantity | RoHS | |
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162
In-stock
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Mitsubishi Electric | IGBT Modules IGBT MODULE S-SERIES NX TYPE DUAL | Box | 3405 W | 1200 V | 1.8 V | 450 A | 0.5 uA | 1 | Green available | ||||||
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5
In-stock
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Infineon Technologies | IGBT Modules HYBRID PACK 2 | IGBT Silicon Modules | HybridPack2 | + 150 C | 1500 W | 3-Phase | 1200 V | 1.8 V | 400 A | 400 nA |
