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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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109
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 580A | IGBT Silicon Modules | 62 mm | + 150 C | Bulk | 2400 W | Dual | 1200 V | 2.1 V | 580 A | 400 nA | ||
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132
In-stock
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STMicroelectronics | IGBT Modules IGBT & Power Bipolar | IGBT Silicon Modules | SDIP-25L | + 150 C | Bulk | 33 W | 3-Phase | 600 V | 2.1 V | 10 A | |||
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119
In-stock
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STMicroelectronics | IGBT Modules IGBT & Power Bipolar | IGBT Silicon Modules | SDIP-38L | + 150 C | Bulk | 44 W | 3-Phase Inverter | 600 V | 2.1 V | 15 A | - | ||
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VIEW | Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | Bulk | 2250 W | Single Dual Emitter | 1200 V | 2.1 V | 570 A | 400 nA |
