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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
15,600
In-stock
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Infineon Technologies | IGBT Modules 3300V 400A DUAL | IGBT Silicon Modules | IHM | + 125 C | 4.8 kW | Dual | 3300 V | 3.4 V | 660 A | 400 nA | ||
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|
GET PRICE |
130
In-stock
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Infineon Technologies | IGBT Modules N-CH 3.3KV 660A | IGBT Silicon Modules | IHV130 | + 125 C | Single Dual Collector Dual Emitter | 3300 V | 660 A |
