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Packaging :
Gate-Emitter Leakage Current :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
BSM50GAL120DN2
1+
$63.030
5+
$61.620
10+
$59.210
25+
$57.300
RFQ
15
In-stock
Infineon Technologies IGBT Modules 1200V 50A CHOPPER IGBT Silicon Modules Half Bridge GAL 1 + 150 C Tray 400 W Half Bridge 1200 V 2.5 V 78 A 400 nA
BSM50GB120DN2
1+
$63.510
5+
$62.270
10+
$57.710
RFQ
20,100
In-stock
Infineon Technologies IGBT Modules 1200V 50A DUAL IGBT Silicon Modules Half Bridge1 + 150 C Bulk 400 W Half Bridge 1200 V 2.5 V 78 A 200 nA
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