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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | ROSH | Minimum working temperature | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
13,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 2.6KA | IGBT Silicon Modules | IHM | + 125 C | Bulk | 12.5 kW | Dual Common Emitter Common Gate | 1700 V | 2.6 V | 2600 A | 400 nA | ||||
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GET PRICE |
300
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.6KA | IGBT Silicon Modules | + 125 C | 1700 V | 2600 A | ROHS compliant | - 40 C |
