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- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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124
In-stock
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Mitsubishi Electric | IGBT Modules IGBT MODULE A-SERIES SINGLE | Box | 2.35 kW | Single | 1.2 kV | 2.1 V | 400 A | 1 uA | 20 V | 10 | Green available | |||||
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12,600
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 400A | IGBT Silicon Modules | Module | + 150 C | 2400 W | Single | 1.2 kV | 1.75 V | 400 A | 400 nA |
