- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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191
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 75A | IGBT Silicon Modules | + 150 C | 385 W | 1200 V | 2.15 V | 75 A | 100 nA | |||||
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GET PRICE |
245
In-stock
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Infineon Technologies | IGBT Modules 1200V 50A PIM | IGBT Silicon Modules | EconoPIM3 | + 125 C | Bulk | 270 W | Hex | 1200 V | 2.15 V | 75 A | 400 nA | ||
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40,000
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 75A | IGBT Silicon Modules | + 150 C | 395 W | Dual | 1200 V | 2.15 V | 75 A | 100 nA |
