- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Applied Filters :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Package | RoHS | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
35
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 900A | Chassis Mount | - 40 C | + 125 C | Box | 1200 V | 900 A | 20 V | Module | 100% Green available | |||||||||
|
GET PRICE |
162
In-stock
|
Infineon Technologies | IGBT Modules 1200V 600A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 2800 W | Single | 1200 V | 1.7 V | 900 A | 400 nA | |||||||||
|
GET PRICE |
17,000
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 900A | IGBT Silicon Modules | + 150 C | 5.1 kW | 1200 V | 2.05 V | 900 A | 400 nA | |||||||||||
|
GET PRICE |
140
In-stock
|
Infineon Technologies | IGBT Modules 1200V 900A | IGBT Silicon Modules | + 150 C | 4300 W | 1200 V | 2.1 V | 900 A | 400 nA | |||||||||||
|
GET PRICE |
15,100
In-stock
|
Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | PRIME2 | + 150 C | 5.1 kW | Dual | 1200 V | 2.1 V | 900 A | 400 nA | |||||||||
|
GET PRICE |
14,000
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.7KV 900A | IGBT Silicon Modules | IHM130 | + 125 C | Dual Dual Collector Dual Emitter | 1700 V | 900 A | ||||||||||||
|
GET PRICE |
500
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 900A | IGBT Silicon Modules | PRIME2 | + 150 C | 1200 V | 900 A |