- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector-Emitter Saturation Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
436
In-stock
|
STMicroelectronics | IGBT Modules 3-phase inverter 3A 600V fast IGBT | IGBT Silicon Modules | NDIP-26 | + 125 C | Tube | 8 W | 3-Phase | 600 V | 2.15 V | 3 A | |||
|
|
GET PRICE |
187
In-stock
|
STMicroelectronics | IGBT Modules IGBT & Power Bipolar | IGBT Silicon Modules | NDIP-26L | + 150 C | Bulk | 8 W | 3-Phase Inverter | 600 V | 2.6 V | 3 A | |||
|
|
GET PRICE |
39
In-stock
|
STMicroelectronics | IGBT Modules SLLIMM nano 2nd series IPM, 3 A, 600 V, 3-phase IG... | IGBT Silicon Carbide Modules | N2DIP-26 | + 175 C | Tube | Half Bridge | 600 V | 2.15 V | 3 A | ||||
|
|
VIEW | STMicroelectronics | IGBT Modules SLLIMM nano 2nd series IPM, 3 A, 600 V, 3-phase IG... | IGBT Silicon Carbide Modules | N2DIP-26 | + 175 C | Tube | Half Bridge | 600 V | 2.15 V | 3 A | |||||
|
|
VIEW | STMicroelectronics | IGBT Modules | IGBT Silicon Modules | NDIP-26 | + 150 C | 8 W | 3-Phase | 600 V | 2.15 V | 3 A | - | ||||
|
|
GET PRICE |
154
In-stock
|
STMicroelectronics | IGBT Modules IGBT & Power Bipolar | IGBT Silicon Modules | NDIP-26L | + 150 C | Tray | 8 W | 3-Phase Inverter | 600 V | 2.15 V | 3 A | - |
