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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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25,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 390A | IGBT Silicon Modules | 62 mm | + 125 C | Bulk | Dual | 1700 V | 390 A | |||||
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4
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 300A 650V | IGBT Silicon Modules | Module | + 150 C | 1100 W | Dual | 650 V | 1.55 V | 390 A | 100 nA |
