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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Package | Installation style | Factory packaging quantity | trademark | Pd-power dissipation | Gate/emitter maximum voltage | |
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450
In-stock
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Infineon Technologies | 62mm C-series module with the fast IGBT2 for high-frequency switching | IGBT Silicon Modules | 62 mm | - 40 C | + 125 C | 106.4 mm | 61.4 mm | 30.9 mm | Dual | Si | 1200 V | 3.75 V | 370 A | 400 nA | Tray | Chassis Mount | 10 | Infineon Technologies | 1950 W | 20 V | |||
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5
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 370A | IGBT Silicon Modules | 62 mm | + 125 C | Single | 1200 V | 370 A | ||||||||||||||||
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10
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 370A | IGBT Silicon Modules | Econo D | + 125 C | Dual | 1200 V | 370 A | ||||||||||||||||
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VIEW | Infineon Technologies | IGBT Modules 1200V 200A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Single Dual Emitter | 1200 V | 2.1 V | 370 A | 400 nA | ||||||||||||||
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GET PRICE |
36
In-stock
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Infineon Technologies | IGBT Modules 1200V 200A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Single Dual Emitter | 1200 V | 2.1 V | 370 A | 400 nA |
