- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Package | RoHS | |
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13,800
In-stock
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Infineon Technologies | IGBT Modules 1600V 1800A SINGLE | - 40 C | + 125 C | Box | 11 kW | Triple Common Emitter Common Gate | 1600 V | 3.5 V | 1800 A | 600 nA | 20 V | Module | 100% Green available | |||||
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1
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.8KA | IGBT Silicon Modules | + 125 C | Triple Common Emitter Common Gate | 1700 V | 1800 A | ||||||||||||
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140
In-stock
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Infineon Technologies | IGBT Modules PP IHM I XHP 1 7KV | IGBT Silicon Modules | PRIME3 | + 175 C | 8.95 kW | Dual | 1700 V | 1.75 V | 1800 A | 400 nA |