- Pd - Power Dissipation :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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151
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 1400A 1700V | IGBT Silicon Modules | + 150 C | 9.55 kW | 1700 V | 2.2 V | 1400 A | 400 nA | ||||
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20,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 1.4KA | IGBT Silicon Modules | PRIME3 | + 150 C | 7.65 kW | Dual | 1200 V | 2.05 V | 1400 A | 400 nA |
