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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage Package RoHS
FZ1200R12KE3
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RFQ
11,000
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Infineon Technologies IGBT Modules 1200V 1200A SINGLE     - 40 C + 125 C Box 5.6 kW   1200 V 1.7 V 1200 A 400 nA 20 V Module 100% Green available
FZ800R12KS4_B2
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RFQ
65
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Infineon Technologies IGBT Modules N-CH 1.2KV 1.2KA IGBT Silicon Modules IHM130   + 125 C   7.6 kW Dual 1200 V 3.7 V 1200 A 400 nA      
FF1200R12KE3
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RFQ
14,100
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Infineon Technologies IGBT Modules 1200V 1200A IGBT Module   IHM 130X140-10   + 125 C   5 kW Dual 1200 V 1.7 V 1200 A 400 nA      
FZ1200R16KF4
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RFQ
12,600
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Infineon Technologies IGBT Modules 1600V 1200A SINGLE IGBT Silicon Modules IHM130   + 125 C   7.8 kW Dual 1600 V 3.5 V 1200 A 400 nA      
FF800R12KE3
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RFQ
36
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Infineon Technologies IGBT Modules 1200V 800A DUAL IGBT Silicon Modules IHM130   + 125 C   3.9 kW Dual 1200 V 1.7 V 1200 A 400 nA      
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RFQ
3
In-stock
Infineon Technologies IGBT Modules N-CH 1.7KV 1.2KA IGBT Silicon Modules IHM130   + 125 C     Dual Dual Collector Dual Emitter 1700 V   1200 A        
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3
In-stock
Infineon Technologies IGBT Modules N-CH 1.7KV 1.2KA IGBT Silicon Modules IHM130   + 125 C     Single Dual Collector Dual Emitter 1700 V   1200 A        
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