- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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13,000
In-stock
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Infineon Technologies | IGBT Modules IGBT 600V 600A | IGBT Silicon Modules | + 150 C | Bulk | 1650 W | Dual | 600 V | 1.9 V | 700 A | 400 nA | |||
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|
GET PRICE |
1
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 600A 650V | IGBT Silicon Modules | + 150 C | 1800 W | Dual | 650 V | 1.95 V | 700 A | 100 nA | ||||
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|
GET PRICE |
251
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 700A | IGBT Silicon Modules | 62 mm | + 125 C | 3900 W | Single | 1200 V | 3.2 V | 700 A | 400 nA |
