- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3
In-stock
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Infineon Technologies | IGBT Modules 3 PHASE POWER BRIDGE | IGBT Silicon Modules | + 150 C | Bulk | 500 W | 1200 V | 2.15 V | 135 A | 100 nA | ||||
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60
In-stock
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Infineon Technologies | IGBT Modules 600V 100A PIM | IGBT Silicon Modules | EconoPIM3 | + 125 C | 250 W | Hex | 600 V | 1.95 V | 135 A | 300 nA |
