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8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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80
In-stock
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Infineon Technologies | IGBT Modules 1700V 400A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 3.12 kW | Single Dual Emitter | 1700 V | 2.6 V | 800 A | 200 nA | ||||
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383
In-stock
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Infineon Technologies | IGBT Modules 1700V 100A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 960 W | Dual | 1700 V | 2.6 V | 200 A | 200 nA | ||||
|
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365
In-stock
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Infineon Technologies | IGBT Modules 1700V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 1700 V | 2.6 V | 300 A | 200 nA | ||||
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65
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 50A | IGBT Silicon Modules | EconoPACK 2 | + 150 C | 350 W | Hex | 1200 V | 2.5 V | 50 A | 200 nA | ||||
|
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132
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | Half Bridge2 | + 150 C | 800 W | Half Bridge | 1200 V | 2.5 V | 150 A | 200 nA | ||||
|
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12,000
In-stock
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Infineon Technologies | IGBT Modules 1200V 200A SINGLE | IGBT Silicon Modules | 62 mm | + 150 C | 1550 W | Single | 1200 V | 2.5 V | 300 A | 200 nA | ||||
|
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20,100
In-stock
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Infineon Technologies | IGBT Modules 1200V 50A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | Bulk | 400 W | Half Bridge | 1200 V | 2.5 V | 78 A | 200 nA | |||
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168
In-stock
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Infineon Technologies | IGBT Modules 1200V 50A FL BRIDGE | IGBT Silicon Modules | EconoPACK 2A | + 150 C | 350 W | Hex | 1200 V | 2.5 V | 72 A | 200 nA |