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Package / Case :
Packaging :
Minimum Quantity :
Gate Charge :
Td (on/off) @ 25°C :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Input Type Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity Power - Max Reverse Recovery Time (trr) IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
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Infineon Technologies IGBT 600V 160A TO247 TO-274AA - Tube Standard Through Hole -40°C ~ 175°C (TJ) Obsolete SUPER-247 (TO-274AA) 0 1000 750W 95ns - 600V 240A 1.95V @ 15V, 120A 360A 4.47mJ (on), 3.43mJ (off) 220nC 80ns/190ns 400V, 120A, 4.7 Ohm, 15V
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Infineon Technologies IGBT CHIP WAFER Die - Bulk Standard Surface Mount -40°C ~ 175°C (TJ) Active Die 0 364 - - Trench 600V - 2.05V @ 15V, 120A - - 240nC 50ns/160ns 400V, 120A, 4.7 Ohm, 15V
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