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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
11 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
FF150R12MS4G
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17
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Infineon Technologies IGBT Modules N-CH 1.2KV 225A IGBT Silicon Modules Econo D + 125 C   1250 W Dual 1200 V 3.7 V 225 A 400 nA
FF450R06ME3
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12,300
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Infineon Technologies IGBT Modules N-CH 600V 550A IGBT Silicon Modules Econo D + 150 C     Dual 600 V   550 A  
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10
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Infineon Technologies IGBT Modules N-CH 1.7KV 240A IGBT Silicon Modules Econo D + 125 C Tray   Dual 1700 V   240 A  
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10
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Infineon Technologies IGBT Modules N-CH 1.2KV 500A IGBT Silicon Modules Econo D + 125 C     Dual 1200 V   500 A  
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10
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Infineon Technologies IGBT Modules N-CH 1.2KV 370A IGBT Silicon Modules Econo D + 125 C     Dual 1200 V   370 A  
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Infineon Technologies IGBT Modules N-CH 1.7KV 605A IGBT Silicon Modules Econo D + 125 C     Dual 1700 V   605 A  
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10
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 275A IGBT Silicon Modules Econo D + 125 C     Dual 1200 V   275 A  
FF200R12MT4
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Infineon Technologies IGBT Modules IGBT-MODULE IGBT Silicon Modules Econo D + 150 C   1050 W Dual 1200 V 2.15 V 295 A 400 nA
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Infineon Technologies IGBT Modules N-CH 1.7KV 340A IGBT Silicon Modules Econo D + 125 C     Dual 1700 V   340 A  
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Infineon Technologies IGBT Modules N-CH 1.2KV 325A IGBT Silicon Modules Econo D + 125 C     Dual 1200 V   325 A  
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Infineon Technologies IGBT Modules N-CH 1.7KV 375A IGBT Silicon Modules Econo D + 125 C     Dual 1700 V   375 A  
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