- Pd - Power Dissipation :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
15,000
In-stock
|
Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | PRIME2 | + 150 C | Dual | 1200 V | 600 A | |||||
|
|
GET PRICE |
16,000
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 600A | IGBT Silicon Modules | PRIME2 | + 150 C | 3.35 kW | Dual | 1200 V | 2.1 V | 600 A | 400 nA | ||
|
|
GET PRICE |
15,100
In-stock
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Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | PRIME2 | + 150 C | 5.1 kW | Dual | 1200 V | 2.1 V | 900 A | 400 nA | ||
|
|
GET PRICE |
3
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 450A | IGBT Silicon Modules | PRIME2 | + 150 C | Dual | 1200 V | 450 A | |||||
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|
GET PRICE |
15,000
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.7KV 930A | IGBT Silicon Modules | PRIME2 | + 150 C | 4.15 kW | Dual | 1700 V | 2.45 V | 930 A | 400 nA | ||
|
|
GET PRICE |
500
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 900A | IGBT Silicon Modules | PRIME2 | + 150 C | 1200 V | 900 A |
