- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
25,000
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.7KV 390A | IGBT Silicon Modules | 62 mm | + 125 C | Bulk | Dual | 1700 V | 390 A | |||||
|
|
109
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 580A | IGBT Silicon Modules | 62 mm | + 150 C | Bulk | 2400 W | Dual | 1200 V | 2.1 V | 580 A | 400 nA | |||
|
|
8
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 650A | IGBT Silicon Modules | 62 mm | + 125 C | Bulk | Single Dual Collector Dual Emitter | 1200 V | 650 A | ||||||
|
|
VIEW | Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | Bulk | 2250 W | Single Dual Emitter | 1200 V | 2.1 V | 570 A | 400 nA |