- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Applied Filters :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
101
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 450A | IGBT Silicon Modules | + 150 C | 2250 W | Dual | 1200 V | 2.1 V | 675 A | 400 nA | |||||
|
GET PRICE |
138
In-stock
|
Infineon Technologies | IGBT Modules 1200V 400A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 2250 W | Single | 1200 V | 1.7 V | 650 A | 400 nA | ||||
|
GET PRICE |
162
In-stock
|
Infineon Technologies | IGBT Modules 1700V 450A 3-PHASE | IGBT Silicon Modules | EconoPACK+ | + 125 C | 2250 W | Hex | 1700 V | 2.45 V | 605 A | 400 nA | ||||
|
GET PRICE |
25,000
In-stock
|
Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 2250 W | Single Dual Emitter | 1200 V | 2.6 V | 570 A | 400 nA | ||||
|
VIEW | Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | Bulk | 2250 W | Single Dual Emitter | 1200 V | 2.1 V | 570 A | 400 nA |