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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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12,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 225A | IGBT Silicon Modules | 62 mm | + 125 C | Tray | 780 W | Dual | 1200 V | 2.15 V | 225 A | 400 nA | ||
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19,100
In-stock
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Infineon Technologies | IGBT Modules 1200V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | Tray | 780 W | Dual | 1200 V | 1.7 V | 225 A | 400 nA | ||
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GET PRICE |
154
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 780 W | Dual | 1200 V | 3.2 V | 150 A | 400 nA | |||
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GET PRICE |
52
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 780 W | Dual | 1200 V | 2.1 V | 200 A | 400 nA |
