- Package / Case :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
12,500
In-stock
|
Infineon Technologies | IGBT Modules N-CH 600V 100A | IGBT Silicon Modules | Econo 3 | + 150 C | 335 W | Array 7 | 600 V | 1.9 V | 100 A | 100 nA | ||
|
|
GET PRICE |
15,000
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 50A | IGBT Silicon Modules | Module | + 150 C | 335 W | IGBT-Inverter | 1200 V | 1.85 V | 83 A | 100 nA | ||
|
|
GET PRICE |
7
In-stock
|
Infineon Technologies | IGBT Modules IGBT Module 100A 650V | IGBT Silicon Modules | + 150 C | 335 W | 650 V | 1.95 V | 100 A | 400 nA | ||||
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|
GET PRICE |
6
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 50A | IGBT Silicon Modules | + 150 C | 335 W | 1200 V | 2.15 V | 83 A | 100 nA | ||||
|
|
GET PRICE |
150
In-stock
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Infineon Technologies | IGBT Modules IGBT MODULES 650V 150A | IGBT Silicon Modules | Module | + 150 C | 335 W | IGBT-Inverter | 650 V | 1.45 V | 150 A | 400 nA | ||
|
|
GET PRICE |
120
In-stock
|
Infineon Technologies | IGBT Modules ECONO PACK 3 WITH FAST TRENCH | IGBT Silicon Modules | Econo 3 | + 150 C | 335 W | Hex | 600 V | 1.9 V | 100 A | 400 nA |
