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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Maximum Operating Temperature | Pd - Power Dissipation | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules IGBT 1200V 50A | IGBT Silicon Modules | + 150 C | 285 W | 1200 V | 2.15 V | 50 A | 100 nA |
