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8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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340
In-stock
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STMicroelectronics | IGBT Modules SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 6... | IGBT Silicon Carbide Modules | N2DIP-26 | + 175 C | Tube | Half Bridge | 600 V | 2.15 V | 5 A | |||||
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GET PRICE |
147
In-stock
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STMicroelectronics | IGBT Modules | IGBT Silicon Modules | SDIP2F-26L | + 175 C | Tube | |||||||||
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355
In-stock
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STMicroelectronics | IGBT Modules SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 6... | IGBT Silicon Carbide Modules | N2DIP-26 | + 175 C | Tube | Half Bridge | 600 V | 2.15 V | 5 A | |||||
|
GET PRICE |
140
In-stock
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Infineon Technologies | IGBT Modules PP IHM I XHP 1 7KV | IGBT Silicon Modules | PRIME3 | + 175 C | 8.95 kW | Dual | 1700 V | 1.75 V | 1800 A | 400 nA | ||||
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39
In-stock
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STMicroelectronics | IGBT Modules SLLIMM nano 2nd series IPM, 3 A, 600 V, 3-phase IG... | IGBT Silicon Carbide Modules | N2DIP-26 | + 175 C | Tube | Half Bridge | 600 V | 2.15 V | 3 A | |||||
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VIEW | STMicroelectronics | IGBT Modules SLLIMM nano 2nd series IPM, 3 A, 600 V, 3-phase IG... | IGBT Silicon Carbide Modules | N2DIP-26 | + 175 C | Tube | Half Bridge | 600 V | 2.15 V | 3 A | ||||||
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VIEW | Infineon Technologies | IGBT Modules 600V 9AD2PAK | D-PAK-3 | + 175 C | Reel | Single | 600 V | 28 A | ||||||||
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VIEW | Infineon Technologies | IGBT Modules | IGBT Silicon Modules | Module | + 175 C | 170 W | IGBT-Inverter | 600 V | 40 A |