- Package / Case :
- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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GET PRICE |
10,400
In-stock
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onsemi | IGBT Transistors Copak Discrete | Through Hole | TO-3P-3 | + 150 C | Tube | 312 W | Single | 1200 V | 2 V | 50 A | +/- 250 nA | +/- 20 V | ||
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488
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 nA | 20 V | |||
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4,350
In-stock
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Fairchild Semiconductor | IGBT Transistors 1200V, 25A Field Stop Trench IGBT | Through Hole | TO-247G03-3 | + 175 C | Tube | 428 W | Single | 1200 V | 1.9 V | 50 A | 400 nA | + /- 25 V | |||
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477
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V | |||
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230
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 25A | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1200 V | 2.2 V | 50 A | 600 nA | 20 V | |||
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227
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 nA | 20 V | |||
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240
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 nA | 20 V | |||
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74
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 25A | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1200 V | 2.2 V | 50 A | 600 nA | 20 V | |||
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220
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V | |||
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230
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V | |||
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2,400
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 1.85 V | 50 A | 250 nA | 20 V | |||
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151
In-stock
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onsemi | IGBT Transistors 1200V/25A IGBT SOLAR/UPS | Through Hole | TO-247 | + 150 C | Tube | 192 W | Single | 1200 V | 2 V | 50 A | 100 nA | 20 V | |||
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2
In-stock
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onsemi | IGBT Transistors 1200/25A IGBT LPT TO-24 | Through Hole | TO-247 | Tube | 250 W | 1200 V | 50 A | 20 V | |||||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 375 W | Single | 1200 V | 2.5 V | 50 A | 250 nA | 20 V | |||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 375 W | Single | 1200 V | 2.5 V | 50 A | 250 nA | 20 V | |||||
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516
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 1200 V | 2.1 V | 50 A | 250 nA | 20 V | |||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 1200 V | 2.1 V | 50 A | 250 nA | 20 V | |||
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240
In-stock
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onsemi | IGBT Transistors 1200/25A IGBT LPT TO-247 | Through Hole | TO-247 | Tube | 77 W | 1200 V | 2.3 V | 50 A | 100 nA | 20 V |