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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IKA15N65H5
1+
$2.210
10+
$1.880
100+
$1.500
500+
$1.320
RFQ
500
In-stock
Infineon Technologies IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... Through Hole TO-220-3 + 175 C   33.3 W Single 650 V 1.95 V 14 A 100 nA 20 V
IKA15N65H5XKSA1
1+
$2.210
10+
$1.880
100+
$1.500
500+
$1.320
RFQ
438
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-220-3 + 175 C Tube 33.3 W Single 650 V 1.95 V 14 A 100 nA 20 V
STGP7H60DF
1+
$1.580
10+
$1.340
100+
$1.070
500+
$0.937
RFQ
921
In-stock
STMicroelectronics IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A h... Through Hole TO-220-3 + 175 C Tube 88 W Single 600 V 1.95 V 14 A 250 nA 20 V
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