- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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599
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 120 A... | Through Hole | MAX-247-3 | + 175 C | 625 W | Single | 650 V | 1.65 V | 160 A | +/- 250 uA | +/- 20 V | |||||
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591
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 468 W | Single | 1.2 kV | 1.65 V | 80 A | 250 nA | +/- 20 V | ||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 468 W | Single | 1.2 kV | 1.65 V | 80 A | 250 nA | +/- 20 V | ||||
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240
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 275 W | Single | 650 V | 1.65 V | 80 A | 100 nA | +/- 20 V | ||||
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2,368
In-stock
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onsemi | IGBT Transistors RC2 IGBT 5A 600V DPAK | SMD/SMT | DPAK-3 | + 175 C | Reel | 56 W | Single | 600 V | 1.65 V | 16 A | +/- 100 nA | +/- 20 V | ||||
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377
In-stock
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Fairchild Semiconductor | IGBT Transistors 24a 600V IGBT UFS N-Channel | Through Hole | TO-247-3 | + 150 C | Tube | 104 W | Single | 600 V | 1.65 V | 24 A | +/- 100 nA | +/- 20 V | ||||
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424
In-stock
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Fairchild Semiconductor | IGBT Transistors HGTP12N60C3D | Through Hole | TO-220-3 | + 150 C | Tube | 104 W | Single | 600 V | 1.65 V | 24 A | +/- 100 nA | +/- 20 V | ||||
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GET PRICE |
6,000
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 75 A l... | Through Hole | TO-247-3 | + 175 C | 468 W | Single | 650 V | 1.65 V | 120 A | +/- 250 uA | +/- 20 V | ||||
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600
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 75 A l... | Through Hole | TO-247-3 | + 175 C | 488 W | Single | 650 V | 1.65 V | 120 A | +/- 250 uA | +/- 20 V | |||||
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600
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 50 A l... | Through Hole | TO-247-3 | + 175 C | 375 W | Single | 650 V | 1.65 V | 80 A | +/- 250 uA | +/- 20 V | |||||
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36
In-stock
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IR / Infineon | IGBT Transistors 600V 96A | Through Hole | TO-247-3 | + 175 C | Tube | 330 W | Single | 600 V | 1.65 V | 96 A | 100 nA | +/- 20 V |