- Manufacture :
- Package / Case :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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417
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V Field Stop Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 650 V | 1.6 V | 240 A | +/- 250 nA | +/- 20 V | |||
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702
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Trench IGBT Gen3 | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 650 V | 1.5 V | 240 A | + / - 250 nA | +/- 20 V | |||
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177
In-stock
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IXYS | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT | Through Hole | PLUS 247-3 | + 175 C | Tube | 880 W | Single | 650 V | 1.75 V | 240 A | 100 nA | 20 V | |||
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74
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-274AA-3 | + 175 C | Tube | 750 W | Single | 600 V | 1.65 V | 240 A | 400 nA | 20 V | |||
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92
In-stock
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IXYS | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT | Through Hole | TO-264-3 | + 175 C | Tube | 880 W | Single | 650 V | 1.75 V | 240 A | 100 nA | 20 V | |||
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15
In-stock
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Infineon Technologies | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | Through Hole | TO-247-3 | + 175 C | Tube | 750 W | Single | 600 V | 2.2 V | 240 A | 400 nA | +/- 20 V |
