- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
300
In-stock
|
IR / Infineon | IGBT Transistors 600V Low VCEon | SMD/SMT | TO-263-3 | Tube | 250 W | Single | 600 V | 1.95 V | 48 A | +/- 20 V | |||||
|
|
300
In-stock
|
Infineon Technologies | IGBT Transistors 600V Low VCEon | Through Hole | TO-262-3 | Tube | 250 W | Single | 600 V | 1.95 V | 48 A | +/- 20 V | |||||
|
|
23,800
In-stock
|
Infineon Technologies | IGBT Transistors 600V UltraFast Trench IGBT | Through Hole | TO-247-3 | Tube | 250 W | Single | 600 V | 1.95 V | 48 A | +/- 20 V | |||||
|
|
12,100
In-stock
|
Infineon Technologies | IGBT Transistors 600V UltraFast Trench IGBT | Through Hole | TO-220AB-3 | Tube | 250 W | Single | 600 V | 1.95 V | 48 A | +/- 20 V | |||||
|
|
84
In-stock
|
IXYS | IGBT Transistors 24 Amps 1200V | Through Hole | TO-220-3 | + 150 C | Tube | 250 W | Single | 1.2 kV | 3.6 V | 48 A | 100 nA | +/- 20 V | |||
|
|
22
In-stock
|
IXYS | IGBT Transistors 48 Amps 1200V 2.75 Rds | Through Hole | ISOPLUS 247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 3.6 V | 48 A | 100 nA | +/- 20 V | |||
|
|
VIEW | Fairchild Semiconductor | IGBT Transistors Dis Short Circuit Rated IGBT | Through Hole | TO-3P-3 | + 150 C | Tube | 235 W | Single | 600 V | 2.2 V | 48 A | +/- 100 nA | +/- 20 V |
