1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
352
In-stock
|
Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 306 W | Single | 650 V | 1.8 V | 120 A | +/- 400 nA | +/- 20 V |
