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8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGA50T65SHD
1+
$4.320
10+
$3.670
100+
$3.180
250+
$3.020
RFQ
467
In-stock
Fairchild Semiconductor IGBT Transistors 650V FS Gen3 Trench IGBT Through Hole TO-3PN + 175 C Tube 319 W   650 V 2.14 V 100 A 400 nA 30 V
APT45GP120BG
1+
$19.780
10+
$17.980
25+
$16.630
50+
$15.730
RFQ
22
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-247-3 + 150 C Tube 625 W Single 1.2 kV 3.3 V 100 A 100 nA 30 V
NGTB50N120FL2WG
1+
$9.330
10+
$8.430
25+
$8.040
100+
$6.980
RFQ
1,137
In-stock
onsemi IGBT Transistors 1200V/50A FAST IGBT FSII Through Hole TO-247 + 175 C Tube 535 W Single 1200 V 2.2 V 100 A 200 nA 30 V
NGTG50N60FWG
1+
$5.300
10+
$4.500
100+
$3.910
250+
$3.710
RFQ
185
In-stock
onsemi IGBT Transistors 600V/50A IGBT NPT TO-247 Through Hole TO-247 + 150 C Tube 223 W Single 600 V 1.45 V 100 A 200 nA 30 V
NGTB50N60FWG
1+
$6.300
10+
$5.360
100+
$4.650
250+
$4.410
RFQ
146
In-stock
onsemi IGBT Transistors 600V/50A IGBT NPT TO-247 Through Hole TO-247 + 150 C Tube 223 W Single 600 V 1.45 V 100 A 200 nA 30 V
APT75GP120B2G
1+
$25.590
5+
$24.440
10+
$23.680
25+
$21.760
RFQ
100
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole T-MAX-3 + 150 C   1.042 kW Single 1.2 kV 3.3 V 100 A 100 nA 30 V
IRG8P60N120KD-EPBF
1+
$10.870
10+
$9.990
25+
$9.580
50+
$9.060
RFQ
33
In-stock
IR / Infineon IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AD-3 + 150 C Tube 420 W Single 1200 V 1.7 V 100 A 400 nA 30 V
IRG8P60N120KDPBF
1+
$11.770
10+
$10.640
25+
$10.140
50+
$9.450
RFQ
20
In-stock
IR / Infineon IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AC-3 + 150 C Tube 420 W Single 1200 V 1.7 V 100 A 400 nA 30 V
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