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Pd - Power Dissipation :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
SGP23N60UFTU
1+
$2.220
10+
$1.890
100+
$1.510
500+
$1.320
RFQ
1,978
In-stock
Fairchild Semiconductor IGBT Transistors Dis High Perf IGBT Through Hole TO-220-3 + 150 C Tube 100 W Single 600 V 2.1 V 23 A +/- 100 nA +/- 20 V
IRG4BC30UPBF
1+
$2.230
10+
$1.900
100+
$1.520
500+
$1.330
RFQ
1,723
In-stock
Infineon Technologies IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT Through Hole TO-220-3 + 150 C Tube 100 W Single 600 V 2.1 V 23 A 100 nA +/- 20 V
IRG4BC40UPBF
1+
$3.490
10+
$2.970
100+
$2.570
250+
$2.440
RFQ
608
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-220-3   Tube 160 W Single 600 V 2.1 V 40 A   +/- 20 V
IRG4BC20UDPBF
1+
$2.260
10+
$1.920
100+
$1.540
500+
$1.340
RFQ
242
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-220-3   Tube 60 W Single 600 V 2.1 V 13 A   +/- 20 V
IRG4BC20UPBF
1+
$1.830
10+
$1.560
100+
$1.240
500+
$1.090
RFQ
611
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-220-3   Tube 60 W Single 600 V 2.1 V 13 A   +/- 20 V
IXDP35N60B
1+
$6.000
10+
$5.420
50+
$5.170
100+
$4.490
RFQ
50
In-stock
IXYS IGBT Transistors 35 Amps 600V Through Hole TO-220-3 + 150 C Tube   Single 600 V 2.1 V     +/- 20 V
SGP23N60UFDTU
1+
$2.220
10+
$1.890
100+
$1.510
500+
$1.330
VIEW
RFQ
Fairchild Semiconductor IGBT Transistors Dis High Perf IGBT Through Hole TO-220-3 + 150 C Tube 100 W Single 600 V 2.1 V 23 A +/- 100 nA +/- 20 V
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