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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IKP10N60T
1+
$1.550
10+
$1.320
100+
$1.060
500+
$0.921
RFQ
744
In-stock
Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 10A Through Hole TO-220-3 + 175 C Tube 110 W Single 600 V 1.8 V 24 A 100 nA 20 V
IGP10N60T
1+
$1.490
10+
$1.260
100+
$1.010
500+
$0.882
RFQ
219
In-stock
Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 600V 10A Through Hole TO-220-3 + 175 C Tube 110 W Single 600 V 1.8 V 24 A 100 nA 20 V
Default Photo
1+
$1.550
10+
$1.320
100+
$1.060
500+
$0.921
RFQ
500
In-stock
Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 10A Through Hole TO-220-3 + 175 C Tube 110 W Single 600 V 1.8 V 24 A 100 nA 20 V
Default Photo
1+
$1.490
10+
$1.260
100+
$1.010
500+
$0.882
RFQ
500
In-stock
Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 600V 10A Through Hole TO-220-3 + 175 C Tube 110 W Single 600 V 1.8 V 24 A 100 nA 20 V
NGTB15N60R2FG
1+
$2.190
10+
$1.860
100+
$1.490
500+
$1.310
RFQ
152
In-stock
onsemi IGBT Transistors RC2 IGBT 15A 600V Through Hole TO-220-3 + 175 C Tube 54 W Single 600 V 1.85 V 24 A +/- 100 nA +/- 20 V
HGTP12N60C3D
1+
$3.360
10+
$2.860
100+
$2.480
250+
$2.350
RFQ
424
In-stock
Fairchild Semiconductor IGBT Transistors HGTP12N60C3D Through Hole TO-220-3 + 150 C Tube 104 W Single 600 V 1.65 V 24 A +/- 100 nA +/- 20 V
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