- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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GET PRICE |
57,400
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp2 150kHz | Through Hole | TO-220-3 | + 150 C | Tube | 215 W | Single | 600 V | 2.05 V | 40 A | 100 nA | +/- 20 V | |||
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608
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-220-3 | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 20 V | ||||||
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947
In-stock
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STMicroelectronics | IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop | Through Hole | TO-220-3 | + 175 C | Tube | 167 W | Single | 600 V | 2.2 V | 40 A | 250 nA | 20 V | ||||
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350
In-stock
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IR / Infineon | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-220-3 | Tube | 160 W | Single | 600 V | 2.5 V | 40 A | +/- 20 V | ||||||
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80
In-stock
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IXYS | IGBT Transistors GenX3 1200V XPT IGBT | Through Hole | TO-220-3 | + 175 C | Tube | 278 W | Single | 1200 V | 4 V | 40 A | 100 nA | 30 V | ||||
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1,000
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A l... | Through Hole | TO-220-3 | + 175 C | 166 W | Single | 650 V | 1.55 V | 40 A | 250 uA | +/- 20 V |