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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGB20B60PD1PBF
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RFQ
57,400
In-stock
Infineon Technologies IGBT Transistors 600V Warp2 150kHz Through Hole TO-220-3 + 150 C Tube 215 W Single 600 V 2.05 V 40 A 100 nA +/- 20 V
IRG4BC40UPBF
1+
$3.490
10+
$2.970
100+
$2.570
250+
$2.440
RFQ
608
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-220-3   Tube 160 W Single 600 V 2.1 V 40 A   +/- 20 V
STGP20V60F
1+
$2.060
10+
$1.750
100+
$1.400
500+
$1.230
RFQ
947
In-stock
STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop Through Hole TO-220-3 + 175 C Tube 167 W Single 600 V 2.2 V 40 A 250 nA 20 V
IRG4BC40WPBF
1+
$3.030
10+
$2.570
100+
$2.230
250+
$2.110
RFQ
350
In-stock
IR / Infineon IGBT Transistors 600V Warp 60-150kHz Through Hole TO-220-3   Tube 160 W Single 600 V 2.5 V 40 A   +/- 20 V
IXYP20N120C3
1+
$4.850
10+
$4.120
100+
$3.570
250+
$3.390
RFQ
80
In-stock
IXYS IGBT Transistors GenX3 1200V XPT IGBT Through Hole TO-220-3 + 175 C Tube 278 W Single 1200 V 4 V 40 A 100 nA 30 V
STGP20M65DF2
1+
$2.190
10+
$1.860
100+
$1.490
500+
$1.300
RFQ
1,000
In-stock
STMicroelectronics IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A l... Through Hole TO-220-3 + 175 C   166 W Single 650 V 1.55 V 40 A 250 uA +/- 20 V
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