IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	STGP30H60DFB	1+ $2.650 10+ $2.250 100+ $1.800 500+ $1.580		PDF RFQ	881 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A...	Through Hole	TO-220-3	+ 175 C	260 W	Single	600 V	1.55 V	60 A	+ / - 250 nA	+/- 20 V
	STGP5H60DF	1+ $1.050 10+ $0.896 100+ $0.689 500+ $0.609		PDF RFQ	1,752 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A h...	Through Hole	TO-220-3	+ 175 C	88 W	Single	600 V	1.5 V	10 A	+ / - 250 nA	+/- 20 V