IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IGP50N60T	1+ $3.850 10+ $3.280 100+ $2.840 250+ $2.700		PDF RFQ	329 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS IGBT TECH 600V 50A	Through Hole	TO-220-3	+ 175 C	Tube	333 W	Single	600 V	1.9 V	90 A	100 nA	20 V
	IGP50N60TXKSA1	1+ $3.850 10+ $3.280 100+ $2.840 250+ $2.700		PDF RFQ	500 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS IGBT TECH 600V 50A	Through Hole	TO-220-3	+ 175 C	Tube	333 W	Single	600 V	1.9 V	90 A	100 nA	20 V

IGP50N60T

IGP50N60T

Infineon Technologies

IGBT Transistors LOW LOSS IGBT TECH 600V 50A

Stock : 329

1+: $3.850

10+: $3.280

100+: $2.840

250+: $2.700

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IGP50N60TXKSA1

Infineon Technologies

IGBT Transistors LOW LOSS IGBT TECH 600V 50A

Stock : 500

1+: $3.850

10+: $3.280

100+: $2.840

250+: $2.700

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