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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
APT100GN60LDQ4G
1+
$14.810
10+
$13.460
25+
$12.450
50+
$11.770
RFQ
75
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... Through Hole TO-264-3 + 175 C   625 W Single 600 V 1.5 V 229 A 600 nA 30 V
FGL60N100BNTDTU
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RFQ
4,000
In-stock
Fairchild Semiconductor IGBT Transistors HIGH POWER Through Hole TO-264-3 + 150 C Tube 180 W Single 1000 V 1.5 V 60 A +/- 500 nA +/- 25 V
FGL60N100BNTD
1+
$6.000
10+
$5.000
100+
$4.000
250+
$4.000
RFQ
5,650
In-stock
Fairchild Semiconductor IGBT Transistors HIGH POWER Through Hole TO-264-3 + 150 C Tube 180 W Single 1000 V 1.5 V 60 A +/- 500 nA +/- 25 V
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