2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
142
In-stock
|
onsemi | IGBT Transistors 600V/40A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 417 W | Single | 600 V | 2 V | 80 A | 200 nA | 20 V | ||||
|
150
In-stock
|
onsemi | IGBT Transistors FSII 50A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 417 W | Single | 600 V | 1.8 V | 100 A | 200 nA | +/- 20 V |